TN3019A |
RFQ for TN3019A Required Field |
 |
| Technical/Catalog Information | TN3019A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 1A |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 15mA, 150mA |
| Frequency - Transition | 100MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226 |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TN3019A TN3019A |
| Product | Manufacturers | Pack | D/C |
| TN3019A | - | - | 06/07+ |
|
Symbol |
Parameter |
Value |
Units |
|
VCEO |
Collector-Emitter Voltage |
80 |
V |
|
VCBO |
Collector-Base Voltage |
140 |
V |
|
VEBO |
Emitter-Base Voltage |
7.0 |
V |
|
IC |
Collector Current - Continuous |
1.0 |
mA |
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
